In the “Memristive Devices: Planar and Transparent Memristive Devices Based on Titanium Oxide Coated Silver Nanowire Networks with Tunable Switching Voltage”, published in Small (21/2021), the team demonstrates transparent resistive switching devices entirely fabricated by open-air approaches, without a deposition chamber. The threshold voltage can be tuned by adjusting the density of AgNWs, while maintaining a high LRS/HRS ratio. The researchers show the effect of oxide thickness on the threshold-switching phenomenon, thus shedding light on the conduction mechanism of this type of switching devices. This was chosen to illustrate the backcover of the issue.